Hsin Lin Seminar

Wednesday, April 10, 2019


Lecture Details

2:00 pm - 3:00 pm
SERC Building, room 703
Title: Topological Materials

Speaker: Hsin Lin, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan


Topological materials host various novel quantum phases of electrons which are characterized by band topology and topologically protected surface/edge states. Despite recent progress, intense world-wide research activity in search of new classes of topological materials is continuing unabated. This interest is driven by the need for materials with greater structural flexibility and tunability to enable viable applications in spintronics and quantum computing. We have used first-principles band theory computations to successfully predict many new classes of 3D topologically interesting materials, including Bi 2 Se 3 series, ternary half-Heuslers, TlBiSe 2 family, Li 2 AgSb-class, and GeBi 2 Te 4 family as well as topological crystalline insulator (TCI) SnTe family and Weyl semimetals TaAs, SrSi 2 , (Mo,W)Te 2 , Ta 3 S 2 , and LaAlGe family. I will also highlight our recent work on unconventional chiral fermions in RhSi, cubic Dirac points in LiOsO 3, rotational symmetry protected TCIs, and Kramer-Weyl fermions in non-magnetic chiral cyrstals.


Hsin Lin is an Associate Research Fellow at Institute of Physics, Academia Sinica, Taipei, Taiwan. He was an Assistant Professor in the Department of Physics at National University of Singapore (NUS) where he was awarded a SGD~3 million Singapore National Research Foundation Fellowship Grant. Before joining NUS in July 2013, he was a Research Assistant Professor in Prof. Bansil’s group in the Department of Physics at Northeastern University, where he received his Ph.D. in 2008. He obtained his M.S. degree from National Tsing Hua University and B.S. degree from National Taiwan University. His research focuses on the electronic structure and spectroscopy of exotic quantum states of matter such as topological insulators, high temperature superconductors, and colossal magnetoresistance materials. Based on first-principles calculations and realistic tight-binding modeling, he is working to elucidate generalized matrix element effects in various spectroscopies.