Haowei Peng

former member, Early Career Investigator Committee (2015-2016)

Temple University
Departments of Physics
SERC 720B
1925 N. 12th Street
Philadelphia, PA 19122

Phone: (215) 204-2399
Email: haowei.peng@temple.edu

Haowei Peng received his Ph.D. in condensed matter physics from the Institute of Semiconductors, Chinese Academy of Sciences in 2009. He joined Temple University as a Research Assistant Professor of Physics, within the group of Prof. John P. Perdew. Before that, he was a postdoc at Northwestern University from 2009 to 2011, and at the National Renewable Energy Laboratory from 2011 to 2014. His research covers the electronic structure, optical, magnetic, defect, and transport properties of semiconductor materials, and their related applications for optoelectronics, catalysis, thermoelectrics, spintronics, etc.

Research Interests

• Defect physics in semiconductors
• Energy application of semiconductor materials
• Magnetic properties of semiconductor materials

5 most relevant publications

• H. Peng*, I. G. McKendry, R. Ding, A. C. Thenuwara, Q. Kang, S. Shumlas, D. R. Strongin,  M. J. Zdilla, and J. P. Perdew*, "Redox properties of birnessite from a defect perspective”, Proc. Natl. Acad. Sci. U.S.A. in-press (2017)
• H. Peng*, Z.-H. Yang, J. P. Perdew, and J. Sun, "Versatile van der Waals density functional based on a meta-generalized gradient approximation", Phys. Rev. X 6, 041005 (2016)
• H. Peng, P. Ndione, A. Zakutayev, D. S. Ginley, and S. Lany, "Design of semiconducting tetrahedral Mn1-xZnxO alloys and their application to solar water splitting", Phys. Rev. X 5, 021016 (2015)
• H. Peng, and S. Lany, Semiconducting transition-metal oxides based on d5 cations: Theory for MnO and Fe2O3, Phys. Rev. B. 85, 201202R (2012)
• H. Peng, H. J. Xiang, S.-H. Wei, S.-S. Li, J.-B. Xia, J. Li, Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d0 Semiconductors, Phys. Rev. Lett. 102, 017201 (2009)